DDR4


Bild KEY Part # / Hersteller Beschreibung / PDF Menge / Anfrage
K4A8G165WC-BIWE

K4A8G165WC-BIWE

Samsung Semiconductor

8 Gb 512M x 16 3200 Mbps 1.2 V -40 ~ 95 °C 96FBGA Mass Production.

17075Stück Lager

K4AAG085WA-BCTD

K4AAG085WA-BCTD

Samsung Semiconductor

16 Gb 2G x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

21058Stück Lager

K4AAG085WA-BCWE

K4AAG085WA-BCWE

Samsung Semiconductor

16 Gb 2G x 8 3200 Mbps 1.2 V 0 ~ 85 °C 78FBGA Sample.

26892Stück Lager

K4AAG085WB-MCPB

K4AAG085WB-MCPB

Samsung Semiconductor

16 Gb 2G x 8 2133 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

17877Stück Lager

K4AAG085WB-MCRC

K4AAG085WB-MCRC

Samsung Semiconductor

16 Gb 2G x 8 2400 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

20885Stück Lager

K4AAG165WA-BCTD

K4AAG165WA-BCTD

Samsung Semiconductor

16 Gb 1G x 16 2666 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.

23631Stück Lager

K4AAG165WA-BCWE

K4AAG165WA-BCWE

Samsung Semiconductor

16 Gb 1G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

15192Stück Lager

K4AAG165WB-MCPB

K4AAG165WB-MCPB

Samsung Semiconductor

16 Gb 1G x 16 2133 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.

17263Stück Lager

K4AAG165WB-MCRC

K4AAG165WB-MCRC

Samsung Semiconductor

16 Gb 1G x 16 2400 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.

26668Stück Lager

K4AAG165WB-MCTD

K4AAG165WB-MCTD

Samsung Semiconductor

16 Gb 1G x 16 2666 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.

15023Stück Lager

K4ABG085WA-MCTD

K4ABG085WA-MCTD

Samsung Semiconductor

32 Gb 4G x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

20416Stück Lager

K4ABG085WA-MCWE

K4ABG085WA-MCWE

Samsung Semiconductor

32 Gb 4G x 8 3200 Mbps 1.2 V 0 ~ 85 °C 78FBGA Sample.

16719Stück Lager

K4ABG165WA-MCTD

K4ABG165WA-MCTD

Samsung Semiconductor

32 Gb 2G x 16 2666 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.

21405Stück Lager

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