Wolfspeed / Cree CMPA2735075F1-AMP Demonstration Amplifier Circuit
Wolfspeed / Cree CMPA2735075F1-AMP Demonstration Amplifier Circuit offers a test board with the CMPA2735075F GaN MMICs in a 0.5" square screw-down package installed. The CMPA2735075F MMICs contains a two-stage, reactively matched amplifier design achieving very wide bandwidths. The CMPA2735075F provides a 75W peak output power, a 28V operating voltage, and a frequency range of 2.7-3.5GHz. The CMPA2735075F1-AMP Demonstration Amplifier Circuit has a 28V operating voltage and a frequency range of 2.7GHz to 3.5GHz.
Wolfspeed Newest
Wolfspeed E-Series AEC-Q101 Silicon Carbide Diodes are robust SiC semiconductor devices that are automotive qualified for Electric Vehicles (EV) and renewable energy markets.
Date: 2019-09-17Wolfspeed C3M0032120K Silicon Carbide Power MOSFETs are designed using C3M™ MOSFET Technology.
Date: 2019-08-09Wolfspeed CGD12HBXMP Dual Channel Differential Isolated Gate Driver evaluates the two-channel gate driver for the XM3 SiC half-bridge power modules.
Date: 2019-07-12Wolfspeed CGD12HB00D Differential Transceiver Companion Tool evaluates the two-channel gate driver for the XM3 SiC half bridge power modules.
Date: 2019-07-12Wolfspeed CAB450M12XM3 1200V 450A All-Silicon Carbide Half-Bridge Module maximizes power density while minimizing loop inductance and enabling simple power bussing.
Date: 2019-07-12Wolfspeed C3M0016120K Silicon Carbide Power MOSFET facilitates C3M™ MOSFET Technology in an optimized package.
Date: 2019-06-10Wolfspeed 6th Generation 650V C6D SiC Schottky Diodes demonstrate technological innovation and achieve highest system level efficiency in a PFC boost converter.
Date: 2019-05-29Wolfspeed / Cree CMPA5259050F MMICs are gallium nitride (GaN) High Electron Mobility Transistors (HEMT) based on monolithic microwave integrated circuit (MMIC) for radar power amplifiers.
Date: 2019-05-17