Wolfspeed / Cree KIT-CRD-3DD12P Buck-Boost Evaluation Kit
Wolfspeed / Cree KIT-CRD-3DD12P Buck-Boost Evaluation Kit is designed to demonstrate the high-speed switching performance of Cree’s 3rd Generation (C3M™) SiC MOSFETs in the TO-247-4L package. The KIT-CRD-3DD12P Kit accepts the traditional TO-247-3L package without the need of any additional adapters, allowing designers to test and compare C3M MOSFETs in various packages.
Kit Contents
Printed Circuit Board (PCB)(C3M™) 1200V 75mΩ MOSFETsHeatsink (including mounting clips)
Wolfspeed Newest
Wolfspeed E-Series AEC-Q101 Silicon Carbide Diodes are robust SiC semiconductor devices that are automotive qualified for Electric Vehicles (EV) and renewable energy markets.
Date: 2019-09-17Wolfspeed C3M0032120K Silicon Carbide Power MOSFETs are designed using C3M™ MOSFET Technology.
Date: 2019-08-09Wolfspeed CGD12HBXMP Dual Channel Differential Isolated Gate Driver evaluates the two-channel gate driver for the XM3 SiC half-bridge power modules.
Date: 2019-07-12Wolfspeed CGD12HB00D Differential Transceiver Companion Tool evaluates the two-channel gate driver for the XM3 SiC half bridge power modules.
Date: 2019-07-12Wolfspeed CAB450M12XM3 1200V 450A All-Silicon Carbide Half-Bridge Module maximizes power density while minimizing loop inductance and enabling simple power bussing.
Date: 2019-07-12Wolfspeed C3M0016120K Silicon Carbide Power MOSFET facilitates C3M™ MOSFET Technology in an optimized package.
Date: 2019-06-10Wolfspeed 6th Generation 650V C6D SiC Schottky Diodes demonstrate technological innovation and achieve highest system level efficiency in a PFC boost converter.
Date: 2019-05-29Wolfspeed / Cree CMPA5259050F MMICs are gallium nitride (GaN) High Electron Mobility Transistors (HEMT) based on monolithic microwave integrated circuit (MMIC) for radar power amplifiers.
Date: 2019-05-17