Artikelnummer :
TSM2537CQ RFG
Hersteller :
Taiwan Semiconductor Corporation
Beschreibung :
MOSFET N/P-CH 20V 11.6A/9A 6TDFN
FET-Typ :
N and P-Channel
FET-Funktion :
Logic Level Gate, 1.8V Drive
Drain-Source-Spannung (Vdss) :
20V
Strom - kontinuierliche Entleerung (Id) bei 25 ° C :
11.6A (Tc), 9A (Tc)
Rds On (Max) @ Id, Vgs :
30 mOhm @ 6.4A, 4.5V, 55 mOhm @ 5A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Gateladung (Qg) (Max) @ Vgs :
9.1nC @ 4.5V, 9.8nC @ 4.5V
Eingangskapazität (Ciss) (Max) @ Vds :
677pF @ 10V, 744pF @ 10V
Betriebstemperatur :
-55°C ~ 150°C (TJ)
Befestigungsart :
Surface Mount
Paket / fall :
6-VDFN Exposed Pad
Supplier Device Package :
6-TDFN (2x2)