Hersteller :
ON Semiconductor
Beschreibung :
MOSFET 2N-CH 60V 2.6A 8-SOIC
FET-Typ :
2 N-Channel (Dual)
FET-Funktion :
Logic Level Gate
Drain-Source-Spannung (Vdss) :
60V
Strom - kontinuierliche Entleerung (Id) bei 25 ° C :
2.6A
Rds On (Max) @ Id, Vgs :
160 mOhm @ 2.6A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Gateladung (Qg) (Max) @ Vgs :
12nC @ 10V
Eingangskapazität (Ciss) (Max) @ Vds :
200pF @ 30V
Befestigungsart :
Surface Mount
Paket / fall :
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package :
8-SOIC