Beschreibung :
GANFET 3 N-CH 60V/100V 9BGA
FET-Typ :
3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET-Funktion :
GaNFET (Gallium Nitride)
Drain-Source-Spannung (Vdss) :
60V, 100V
Strom - kontinuierliche Entleerung (Id) bei 25 ° C :
1.7A, 500mA
Rds On (Max) @ Id, Vgs :
190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 100µA, 2.5V @ 20µA
Gateladung (Qg) (Max) @ Vgs :
0.22nC @ 5V, 0.044nC @ 5V
Eingangskapazität (Ciss) (Max) @ Vds :
22pF @ 30V, 7pF @ 30V
Betriebstemperatur :
-40°C ~ 150°C (TJ)
Befestigungsart :
Surface Mount
Supplier Device Package :
9-BGA (1.35x1.35)