Artikelnummer :
PMCXB1000UEZ
Hersteller :
Nexperia USA Inc.
Beschreibung :
MOSFET N/P-CH 30V DFN1010B-6
FET-Typ :
N and P-Channel Complementary
Drain-Source-Spannung (Vdss) :
30V
Strom - kontinuierliche Entleerung (Id) bei 25 ° C :
590mA (Ta), 410mA (Ta)
Rds On (Max) @ Id, Vgs :
670 mOhm @ 590mA, 4.5V, 1.4 Ohm @ 410mA, 4.5V
Vgs (th) (Max) @ Id :
950mV @ 250µA
Gateladung (Qg) (Max) @ Vgs :
1.05nC @ 4.5V, 1.2nC @ 4.5V
Eingangskapazität (Ciss) (Max) @ Vds :
30.3pF @ 15V, 43.2pF @ 15V
Leistung max :
285mW (Ta)
Betriebstemperatur :
-55°C ~ 150°C (TJ)
Befestigungsart :
Surface Mount
Paket / fall :
6-XFDFN Exposed Pad
Supplier Device Package :
DFN1010B-6