Beschreibung :
GAN TRANS ASYMMETRICAL HALF BRID
FET-Typ :
2 N-Channel (Half Bridge)
FET-Funktion :
GaNFET (Gallium Nitride)
Drain-Source-Spannung (Vdss) :
60V
Strom - kontinuierliche Entleerung (Id) bei 25 ° C :
9.5A, 38A
Rds On (Max) @ Id, Vgs :
11.5 mOhm @ 20A, 5V, 2.7 mOhm @ 20A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 3mA, 2.5V @ 12mA
Gateladung (Qg) (Max) @ Vgs :
2.7nC @ 5V, 12nC @ 5V
Eingangskapazität (Ciss) (Max) @ Vds :
300pF @ 30V, 1200pF @ 30V
Betriebstemperatur :
-40°C ~ 150°C (TJ)
Befestigungsart :
Surface Mount
Supplier Device Package :
Die