Artikelnummer :
ALD212914SAL
Hersteller :
Advanced Linear Devices Inc.
Beschreibung :
MOSFET 2N-CH 10.6V 0.08A 8SOIC
Serie :
EPAD®, Zero Threshold™
FET-Typ :
2 N-Channel (Dual) Matched Pair
FET-Funktion :
Logic Level Gate
Drain-Source-Spannung (Vdss) :
10.6V
Strom - kontinuierliche Entleerung (Id) bei 25 ° C :
80mA
Rds On (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ Id :
20mV @ 10µA
Gateladung (Qg) (Max) @ Vgs :
-
Eingangskapazität (Ciss) (Max) @ Vds :
-
Befestigungsart :
Surface Mount
Paket / fall :
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package :
8-SOIC